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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47088

Title: Fabrication of Cu2ZnSnSe4 solar cells through multi-step selenization of layered metallic precursor film
Authors: W. C. Chen
V. Tunuguntla
H. W. Li
C. Y. Chen
J. S. Hwang
L. C. Chen
K. H. Chen
C. H. Lee
S. S. Li
Contributors: 國立臺灣海洋大學:光電科學研究所
Keywords: Kesterite structure
CZTSeSelenization
Thin film solar cell
Date: 2016-11
Issue Date: 2018-07-02T01:11:53Z
Publisher: Thin Solid Films
Abstract: Abstract: In this study, we proposed a 4-step selenization process for the RF-sputtered Cu–Zn/Sn metallic stack to prepare Cu2ZnSnSe4 (CZTSe) absorber. We applied a pre-heating treatment for the metal stack under vacuum prior to the selenization, which plays an important role to form a well inter mixed alloy with relatively smooth thin film morphology. The nucleation temperatures were controlled precisely from 150 °C to 500 °C during 4-step selenization to avoid the formation of secondary phases and to improve the crystal quality of CZTSe with a greater homogeneity in the composition. The formation of various phases during each step in 4-step selenization process were studied by X-ray Diffraction, Raman analysis and we proposed a possible reaction mechanism of the CZTSe formation with binary and ternary compounds as intermediates. We also performed optical analysis, including Uv–Visible absorption and low temperature photoluminescence, and scanning transmission electron microscope analysis for the CZTSe samples. Finally, an efficiency of 5.8% CZTSe solar cell is fabricated with an open circuit voltage of 370 mV, short circuit current of 31.99 mA/cm2, and a fill factor of 48.3%.
Relation: 618(A) pp.42-49
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/47088
Appears in Collections:[光電科學研究所] 期刊論文

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