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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/43334

Title: Very low temperature AlOx ultra thin film deposited on (001) GaAs substrates by ALD using DEZn and N2O
Authors: Dong Yuan Lyu(呂東原);Tai-Yuan Lin(林泰源);Jyun-Syong Yang(楊峻雄);Jyh-Rong Gong(龔志榮);Ching-Chiun Wang(王慶鈞);Jen-Rong Huang(黃振榮);Muh-Wan Liang(梁沐旺);Ching-Huei Wu(吳慶輝);Chan-Hsing Lo(羅展興)
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2010
Issue Date: 2017-07-06T01:28:39Z
Abstract: Low-temperature AlOx films were deposited on (001) GaAs substrates by atomiclayer deposition (ALD) using tri-methyl-aluminum (TMAl) and nitrous oxide (N2O).Base on scanning electron microscope (SEM) observations, it was found that AlOx film deposited at 50o C exhibited the smoothest surface. According to x-ray photoelectron spectroscopy (XPS) spectra, only strong signals from Al and O were observed. The binding energy of the Al 2p signal of the AlOx film was identified at 74.2eV which is lower than that of the crystalline Al2O3.
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/43334
Appears in Collections:[光電科學研究所] 演講及研討會

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