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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41395

Title: Growth of β-Ga2O3 and GaN nanowires on GaN for photoelectrochemical hydrogen generation
Authors: Chattopadhyay S;Hsu GM;Basilio AM;Chen HW;Hsu YK;Tu WH;Lin YG;Chen KH;Li CC;Wang SB;Chen HY;Chen LC.
Hwang JS
Liu TY
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2013
Issue Date: 2017-02-15T03:20:48Z
Publisher: Nanotechnology
Abstract: Abstract: Enhanced photoelectrochemical (PEC) performances of Ga(2)O(3) and GaN nanowires (NWs) grown in situ from GaN were demonstrated. The PEC conversion efficiencies of Ga(2)O(3) and GaN NWs have been shown to be 0.906% and 1.09% respectively, in contrast to their 0.581% GaN thin film counterpart under similar experimental conditions. A low crystallinity buffer layer between the grown NWs and the substrate was found to be detrimental to the PEC performance, but the layer can be avoided at suitable growth conditions. A band bending at the surface of the GaN NWs generates an electric field that drives the photogenerated electrons and holes away from each other, preventing recombination, and was found to be responsible for the enhanced PEC performance. The enhanced PEC efficiency of the Ga(2)O(3) NWs is aided by the optical absorption through a defect band centered 3.3 eV above the valence band of Ga(2)O(3). These findings are believed to have opened up possibilities for enabling visible absorption, either by tailoring ion doping into wide bandgap Ga(2)O(3) NWs, or by incorporation of indium to form InGaN NWs.
Relation: 24(5)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41395
Appears in Collections:[光電科學研究所] 期刊論文

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