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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41376

Title: Optical detection of magnetoelectric effect in the composite consisting of InGaN/GaN multiple quantum wells and FeCo thin film
Authors: C. M. Wei;H. Y. Shih;Y. F. Chen;T. Y. Lin
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2011
Issue Date: 2017-02-15T01:42:47Z
Publisher: Applied Physics Letters
Abstract: Abstract: The magnetoelectric effect has been demonstrated based on the composite of InGaN/GaN multiple quantum wells (MQWs) and FeCo thin film. By applying an external magnetic field, the ferromagnetic layer will be deformed due to magnetostriction. This deformation is transmitted to the piezoelectric layers and results in piezoelectric effect, which induces electric polarization in the piezoelectric layers. The induced electric polarization changes the strain and the built-in internal electric field in the InGaN/GaN MQWs and therefore, the optical properties of the InGaN/GaN MQWs change. The results shown here open up a possibility for the application of nitride semiconductors in magneto-optical and magnetoelectric engineering.
Relation: 98
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41376
Appears in Collections:[光電科學研究所] 期刊論文

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