Abstract: The magnetoelectric effect has been demonstrated based on the composite of InGaN/GaN multiple quantum wells (MQWs) and FeCo thin film. By applying an external magnetic field, the ferromagnetic layer will be deformed due to magnetostriction. This deformation is transmitted to the piezoelectric layers and results in piezoelectric effect, which induces electric polarization in the piezoelectric layers. The induced electric polarization changes the strain and the built-in internal electric field in the InGaN/GaN MQWs and therefore, the optical properties of the InGaN/GaN MQWs change. The results shown here open up a possibility for the application of nitride semiconductors in magneto-optical and magnetoelectric engineering.