Abstract: Light harvesting from In2O3 nanopushpins as an antireflection layer has been investigated. We report on the growth of In2O3 nanopushpins on silicon solar cells by catalyst-free and improved two-zone chemical vapor deposition in order to provide a suitable growth environment with low temperature and high growth rate for practical applications. On the basis of spectral reflectance and cell responsivity measurements, we show that In2O3 nanopushpins provide efficient light trapping properties. A dramatic enhancement in short-circuit current (from 19.65 to 24.73 mA/cm2) with In2O3 nanopushpins than that of the bulk silicon wafer is observed. The solar cells incorporated with In2O3 nanopushpins therefore open an excellent alternative to serve as an antireflection layer for the enhancement of light harvesting and cell efficiency.