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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41368

Title: Structural and Optical Characteristics of γ-In2Se3 Nanorods Grown on Si Substrates
Authors: M. D. Yang;C. H. Hu;S. C. Tung;J. L. Shen;S. M. Lan;C. H. Wu;T. Y Lin
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2011
Issue Date: 2017-02-14T08:51:31Z
Publisher: Journal of Nanomaterial
Abstract: Abstract: This study attempted to grow single-phase γ-In2Se3 nanorods on Si (111) substrates by metal-organic chemical vapor deposition (MOCVD). High-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) confirmed that the In2Se3 nanorods are singularly crystallized in the γ phase. The photoluminescence of γ-In2Se3 nanorods at 15 K was referred to as free and bound exciton emissions. The bandgap energy of γ-In2Se3 nanorods at room temperature was determined to be ~1.99 eV, obtained from optical absorption.
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41368
Appears in Collections:[光電科學研究所] 期刊論文

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