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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41356

Title: Improved light extraction efficiency on GaN LEDs by an In2O3 nano-cone film
Authors: Jan-Tian Lian;Jian-Huei Ye;Jian-Ye Liou;Kai-Chieh Tsao;Nai-Chuan Chen;Tai-Yuan Lin
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2013
Issue Date: 2017-02-14T08:24:36Z
Publisher: Journal of Materials Chemistry C
Abstract: Abstract: A bottom up method for the fabrication of a roughened transparent conductive layer (TCL) to accomplish a prominent enhancement in light extraction from GaN-based blue light emitting diodes (LEDs) has been developed. The nanostructured transparent conductive oxide (TCO) film was obtained by thermal oxidation of InN nanocones (NCs) grown beforehand into In2O3 NCs in a tube furnace at 550 °C, beyond the dissociation temperature of InN. A two-fold increase in the light output power of the LED with the In2O3 NCs TCL was achieved compared to that of an LED using a conventional Ni/Au TCL. Our work proposes a simple, useful and low thermal budget route to form a roughened In2O3 NCs film used as the TCL to realize a prominent enhancement in light extraction from LEDs. Based on the capability of the low temperature fabrication process of roughened In2O3 TCLs, our proposed method is suitable for industrial mass manufacture.
Relation: 40
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41356
Appears in Collections:[光電科學研究所] 期刊論文

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