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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41355

Title: Performance of InGaN/GaN MQW LEDs Using Ga-Doped ZnO TCLs Prepared by ALD
Authors: Kuo-Yi Yen;Chien-Hua Chiu;Chun-Wei Li;Chien-Hua Chou;Pei-Shin Lin;Tzu-Pei Chen;Tai-Yuan Lin;Jyh-Rong Gong
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2012
Issue Date: 2017-02-14T08:24:08Z
Publisher: IEEE PHOTONICS TECHNOLOGY LETTERS
Abstract: Abstract— Heavily Ga-doped ZnO (n+-GZO) films prepared by atomic layer deposition were used as transparent conducting layers (TCLs) on InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs). It was found that N2-annealed n+-GZO-coated InGaN/GaN MQW LEDs exhibited reduced forward voltage and enhanced light extraction under certain conditions. A forward voltage of 3.1 V at 20 mA was achieved for a 400 °C N2-annealed n+-GZO-coated InGaN/GaN MQW LED with a specific contact resistance of the n+-GZO on p-GaN contact being 4.1 × 10−3 cm2. Compared to the same InGaN/GaN MQW LED structure with a commercialgrade indium tin oxide (ITO) TCL, the 400 °C N2-annealed
n+-GZO-coated InGaN/GaN MQW LED shows an increment of light output power by 15% at 20 mA. It is believed that the enhanced light extraction of the n+-GZO-coated InGaN/GaN MQW LED is a consequence of a higher refractive index of n+-GZO than that of ITO.
Relation: 24(23)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41355
Appears in Collections:[光電科學研究所] 期刊論文

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