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|Title: ||Performance of InGaN/GaN MQW LEDs Using Ga-Doped ZnO TCLs Prepared by ALD|
|Authors: ||Kuo-Yi Yen;Chien-Hua Chiu;Chun-Wei Li;Chien-Hua Chou;Pei-Shin Lin;Tzu-Pei Chen;Tai-Yuan Lin;Jyh-Rong Gong|
|Issue Date: ||2017-02-14T08:24:08Z
|Publisher: ||IEEE PHOTONICS TECHNOLOGY LETTERS|
|Abstract: ||Abstract— Heavily Ga-doped ZnO (n+-GZO) films prepared by atomic layer deposition were used as transparent conducting layers (TCLs) on InGaN/GaN multiple quantum well (MQW) light emitting diodes (LEDs). It was found that N2-annealed n+-GZO-coated InGaN/GaN MQW LEDs exhibited reduced forward voltage and enhanced light extraction under certain conditions. A forward voltage of 3.1 V at 20 mA was achieved for a 400 °C N2-annealed n+-GZO-coated InGaN/GaN MQW LED with a specific contact resistance of the n+-GZO on p-GaN contact being 4.1 × 10−3 cm2. Compared to the same InGaN/GaN MQW LED structure with a commercialgrade indium tin oxide (ITO) TCL, the 400 °C N2-annealed
n+-GZO-coated InGaN/GaN MQW LED shows an increment of light output power by 15% at 20 mA. It is believed that the enhanced light extraction of the n+-GZO-coated InGaN/GaN MQW LED is a consequence of a higher refractive index of n+-GZO than that of ITO.
|Appears in Collections:||[光電科學研究所] 期刊論文|
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