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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41352

Title: High-performance transparent and flexible inorganic thin film transistors: a facile integration of graphene nanosheets and amorphous InGaZnO
Authors: Min-Kun Dai;Jan-Tien Lian;Tai-Yuan Lin;Yang-Fang Chen
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2013
Issue Date: 2017-02-14T08:16:21Z
Publisher: Journal of Materials Chemistry C
Abstract: Abstract: Transparent and flexible thin film transistors (TFTs) with high performance based on solution processed graphene nanosheets (GNSs)–amorphous indium–gallium–zinc-oxide (a-IGZO) composites have been developed. A high electron mobility of 23.8 cm2 V−1 s−1 has been achieved, which is about thirty times higher than those of the pristine a-IGZO TFTs (0.82 cm2 V−1 s−1) and hydrogenated amorphous silicon (<1 cm2 V−1 s−1). The on/off current ratio remains in a high order of 106 demonstrating the sustainability of the TFT devices. In addition, transparent GNSs–a-IGZO TFTs with a Ta2O5 dielectric layer show superior resistance to mechanical bending with the variation of only 8% in mobility after 100 times of repeated cyclic bending compared with the degradation of more than 70% for the pristine a-IGZO device. Our results demonstrate that GNSs not only play an important role in forming a conducting network in the active matrix, but also enhance the mechanical bending stability of GNSs–a-IGZO composites. It therefore paves a key step to develop large-scale applications for next-generation transparent and flexible electronics.
Relation: 1
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41352
Appears in Collections:[光電科學研究所] 期刊論文

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