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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41346

Title: Efficient Collection of Photogenerated Carriers by Inserting Double Tunnel Junctions in III-nitride p-i-n Solar Cells
Authors: Yung-Chi Yao;Meng-Tsan Tsai;Chun-Ying Huang;Tai-Yuan Lin*;Jinn-Kong Sheu;Ya-Ju Lee
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2013
Issue Date: 2017-02-14T07:48:57Z
Publisher: Applied Physics Letter
Abstract: Abstract: The strain-induced piezoelectric polarization significantly affects the performances of III-nitride p-i-n solar cells. It tilts the energy-band of intrinsic InGaN layers towards a detrimental direction for drifting carriers, and induces a discontinuity at GaN/InGaN hetero-interfaces that hinders the collection of photocurrent. In this study, we have numerically demonstrated a general strategy to overcome the issues by inserting n+/p+/n+ and p+/n+/p+ GaN-based double tunnel junctions into the n- and p-sides of the device, respectively. The energy-band tilting in the intrinsic InGaN layer is hence absent, mainly attributed to high doping concentration of double tunnel junctions, screening piezoelectric polarization sheet charges, boosting the carrier collection efficiency. The impact of energy-barrier discontinuity is also alleviated due to the strong tunneling of photogenerated carriers, efficiently contributing to the photocurrent of the device. As a result, the incorporation of double tunnel junctions into devices offers the potential to realize efficient high indium III-nitride solar cells.
Relation: 109(13)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41346
Appears in Collections:[光電科學研究所] 期刊論文

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