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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41343

Title: Characteristics of GaN-based LEDs using Ga-doped or In-doped ZnO transparent conductive layers grown by atomic layer deposition
Authors: Kuo-Yi Yen
Chien-Hua Chiu
Chi-Ying Hsiao
Chun-Wei Li
Chien-Hua Chou
Ko-Ying Lo
Tzu-Pei Chen
Chu-Hsien Lin
Tai-Yuan Lin
Jyh-Rong Gong
Contributors: 國立臺灣海洋大學:光電科學研究所
Keywords: Light emitting diodes
Atomic layer epitaxy
Metalorganic vapor phase epitaxy
Nitrides
Oxides
Semiconducting II–VI materials
Date: 2014
Issue Date: 2017-02-14T07:26:22Z
Publisher: Journal of Crystal Growth
Abstract: Abstract: Ga-doped ZnO (GZO) and In-doped ZnO (IZO) films were prepared by atomic layer deposition (ALD), and the ALD-grown GZO (or IZO) films with (or without) N2 annealing were employed to serve as transparent conducting layers (TCLs) in InGaN/GaN (multiple quantum well) MQW LEDs. Based on θ-to-2θ X-ray diffraction (XRD) analyses, the N2-annealed GZO was found to show almost the same lattice constant c as ZnO does, while the lattice constant c of a N2-annealed IZO was detected to be larger than that of the ZnO. It appears that the implementation of N2-annealed ALD-grown GZO (or IZO) in an InGaN/GaN MQW LED allows to enable light extraction and forward voltage reduction of the LED under certain conditions. At 20 mA operating condition, the 400 °C N2-annealed n-GZO-coated and the 600 °C N2-annealed n-IZO-coated InGaN/GaN MQW LEDs were found to exhibit optimized forward voltages of 3.1 and 3.2 V, respectively, with the specific contact resistances of the n-GZO/p-GaN and n-IZO/p-GaN contacts being 4.1×10−3 and 8.8×10−3 Ω-cm2. By comparing with an InGaN/GaN MQW LED structure having a commercial-grade indium tin oxide (ITO) TCL, the 400 °C N2-annealed n-GZO-coated InGaN/GaN MQW LED shows an increment of light output power of 15% at 20 mA. It is believed that the enhanced light extraction of the n-GZO-coated InGaN/GaN MQW LED is due to a higher refractive index of n-GZO than that of ITO along with a comparable optical transmittance of n-GZO to that of ITO.
Relation: 387
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41343
Appears in Collections:[光電科學研究所] 期刊論文

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