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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41337

Title: Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition
Authors: Ya-Ju Lee
Zu-Po Yang
Jinn-Kong Sheu
Fang-Yuh Lo
Jhih-Jhong Siao
Zhong-Han Xie
Yi-Lun Chuang
Tai-Yuan Lin
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2016
Issue Date: 2017-02-14T07:13:37Z
Publisher: APL Materials
Abstract: Abstract: High-efficient ZnO-based nanorod array light-emitting diodes (LEDs) were grown by an oblique-angle deposition scheme. Due to the shadowing effect, the inclined ZnO vapor-flow was selectively deposited on the tip surfaces of pre-fabricated p-GaN nanorod arrays, resulting in the formation of nanosized heterojunctions. The LED architecture composed of the slanted n-ZnO film on p-GaN nanorod arrays exhibits a well-behaving current rectification of junction diode with low turn-on voltage of 4.7 V, and stably emits bluish-white luminescence with dominant peak of 390 nm under the operation of forward injection currents. In general, as the device fabrication does not involve passivation of using a polymer or sophisticated material growth techniques, the revealed scheme might be readily applied on other kinds of nanoscale optoelectronic devices.
Relation: 2(5)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41337
Appears in Collections:[光電科學研究所] 期刊論文

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