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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41335

Title: High Breakdown Voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN Quantum-Well Electron-Blocking-Layers
Authors: Ya-Ju Lee
Yung-Chi Yao
Chun-Ying Huang
Tai-Yuan Lin
Li-Lien Cheng
Ching-Yun Liu
Mei-Tan Wang
Jung-Min Hwang
Contributors: 國立臺灣海洋大學:光電科學研究所
Keywords: AlGaN/GaN HEMT
Breakdown voltage
2-DEG
Date: 2014
Issue Date: 2017-02-14T06:59:53Z
Publisher: Nanoscale Research Letters
Abstract: Abstract: In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.
Relation: 9(433)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41335
Appears in Collections:[光電科學研究所] 期刊論文

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