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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41327

Title: Manipulation of polarization effect to engineer III-nitride HEMTs for normally-off operation
Authors: Yung-Chi Yao
Chun-Ying Huang
Tai-Yuan Lin
Li-Lien Cheng
Ching-Yun Liu
Mei-Tan Wang
Jung-Min Hwang
Ya-Ju Lee
Contributors: 國立臺灣海洋大學:光電科學研究所
Keywords: DC transfer characteristics
AlGaN/GaN HEMT
Polarization
2-DEG
Normally-off operation
Date: 2015
Issue Date: 2017-02-14T06:41:45Z
Publisher: Microelectronic Engineering
Abstract: Abstract: We propose a novel, normally-off AlGaN/GaN high-electron-mobility transistor (HEMT) governed by polarization engineering. The fundamental concept is to grade the Al composition of the barrier layer from GaN to AlxGa1−xN, thereby alleviating the impact of piezoelectric polarization on the two-dimensional electron gas (2-DEG) and establishing a conduction-band profile well above the Fermi energy. These effects lead to a positive shift in the threshold voltage of the device and benefit the normally-off operation. It is observed that the device’s DC transfer characteristics can be further modulated simply by adjusting the Al composition of the AlyGa1−yN cap layer and the p-type doping concentration at the top of the GaN buffer layer. These findings, based on a physical simulation of the proposed device, provide a guideline for the implementation of highly efficient, normally-off AlGaN/GaN HEMTs.
Relation: 138(20)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41327
Appears in Collections:[光電科學研究所] 期刊論文

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