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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41321

Title: Enhancement of Light Emission in GaAs Epilayers with Graphene Quantum Dots
Authors: T. N. Lin;K. H. Chih;M. C. Cheng;C. T. Yuan;C. L. Hsu;J. L. Shen;J. L. Hou;C. H. Wu;W. C. Chou;T. Y. Lin
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2015
Issue Date: 2017-02-14T06:03:27Z
Publisher: RSC Advances
Abstract: Abstract: A green and one-step synthesis of graphene quantum dots (GQDs) has been implemented using pulsed laser ablation from aqueous graphene. The synthesized GQDs are able to enhance the photoluminescence (PL) of GaAs epilayers after depositing them on the GaAs surface. An enhancement of PL intensity of a factor of 2.8 has been reached at a GQD concentration of 1.12 mg ml−1. On the basis of the PL dynamics, the PL enhancement in GaAs is interpreted by the carrier transfer from GQDs to GaAs due to the work function difference between them.
Relation: 5
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41321
Appears in Collections:[光電科學研究所] 期刊論文

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