National Taiwan Ocean University Institutional Repository:Item 987654321/41320
English  |  正體中文  |  简体中文  |  全文筆數/總筆數 : 28611/40652
造訪人次 : 776555      線上人數 : 53
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
搜尋範圍 進階搜尋

請使用永久網址來引用或連結此文件: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41320

題名: Multifunctionality of giant and long-lasting persistent photoconductivity: Semiconductor-conductor transition in graphene nanosheets and amorphous InGaZnO hybrid
作者: Min-Kun Dai
Yi-Rou Liou
Jan-Tien Lian
Tai-Yuan Lin
Yang-Fang Chen
貢獻者: 國立臺灣海洋大學:光電科學研究所
關鍵詞: semiconductor-conductor transition
amorphous indium−gallium−zinc oxide (a-IGZO)
graphene nanosheets (GNSs)
optical memory
phototransistor
日期: 2015
上傳時間: 2017-02-14T05:58:48Z
出版者: Photonics
摘要: Abstract: Composite materials can play a decisive role to reveal novel physical properties and enable to advance new generation technologies. Here, we discover that phototransistors based on the integration of two-dimensional graphene nanosheets (GNSs) and amorphous indium–gallium–zinc–oxide (a-IGZO) semiconductors exhibit a giant photo-to-dark current ratio and long-lasting persistent photoconductivity (PPC). Under the illumination of UV light (350 nm) at 50 mW/cm2, a photo-to-dark current ratio up to 2.0 × 107 was obtained, which is about 3 orders of magnitude higher than its pure a-IGZO device counterpart. Moreover, the GNSs/a-IGZO phototransistor possesses an enduring lifetime up to years for the recovery of the transfer characteristics after switching off the UV light. The giant and long-lasting PPC leads GNSs/a-IGZO to become an excellent conductor with conductivity much better than indium tin oxide. The observed unique features represent a semiconductor–conductor transition. In addition to next generation flat, flexible, and display, it can open up a wide variety of application, such as transparent electrodes for optoelectronic devices, optical memory, and light harvesting for energy storage. As an example, we demonstrated the operation of optical memory devices, which may lead to the novel application of holographic storage. Our results shown here therefore provide an outstanding new route for the future development of solution-processable semiconducting optoelectronic devices.
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41320
顯示於類別:[光電科學研究所] 期刊論文

文件中的檔案:

檔案 描述 大小格式瀏覽次數
index.html0KbHTML88檢視/開啟


在NTOUR中所有的資料項目都受到原著作權保護.

 


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - 回饋