Loading...
|
Please use this identifier to cite or link to this item:
http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41258
|
| Title: | Deep and Alignment Free Patterned Etching of GaN Surface Using an Atomic Force Microscope |
| Authors: | Hwang JS;Chen DC;Chen LW;Hu ZS;You ZY;Wu CC;Lin TY;Tsai TR;Chattopadhyay S. |
| Contributors: | 國立臺灣海洋大學：光電科學研究所 |
| Date: | 2011
|
| Issue Date: | 2017-02-13T02:53:40Z
|
| Publisher: | Journal of Nanosci Nanotechnology |
| Abstract: | Abstract: Successful deep and alignment-free patterned etching on GaN using atomic force microscope (AFM) local oxidation followed by in-situ chemical etching is demonstrated. Oxide ridges are grown on GaN on an AFM by applying positive sample bias at 80% humidity, with the oxidation reaction expedited by UV light. The oxide ridges are then etched by HCl solution, leaving troughs in the GaN surface. A dripping strategy for the in-situ chemical etching is recommended that allows deep, alignment-free multiple AFM oxidation/etching works on the GaN surface without any need of substrate removal from the AFM platform. Repeated etching followed by AFM oxidation on a spot on a GaN surface resulting in a hole as deep as 800 nm was also demonstrated. Further, a preliminary evaluation of the porosity of the AFM-grown oxide indicates that the oxide ridges grown on GaN at an AFM cantilever moving speed of 300 nm/s are porous in structure, with an estimated porosity of 86%, which porosity could be reduced if longer resident time of the AFM cantilever on the target oxidation region was used. |
| URI: | http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41258 |
| Appears in Collections: | [光電科學研究所] 期刊論文
|
Files in This Item:
| File |
Description |
Size | Format | |
|---|
| index.html | | 0Kb | HTML | 68 | View/Open |
|
All items in NTOUR are protected by copyright, with all rights reserved.
|
