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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41258

Title: Deep and Alignment Free Patterned Etching of GaN Surface Using an Atomic Force Microscope
Authors: Hwang JS;Chen DC;Chen LW;Hu ZS;You ZY;Wu CC;Lin TY;Tsai TR;Chattopadhyay S.
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2011
Issue Date: 2017-02-13T02:53:40Z
Publisher: Journal of Nanosci Nanotechnology
Abstract: Abstract: Successful deep and alignment-free patterned etching on GaN using atomic force microscope (AFM) local oxidation followed by in-situ chemical etching is demonstrated. Oxide ridges are grown on GaN on an AFM by applying positive sample bias at 80% humidity, with the oxidation reaction expedited by UV light. The oxide ridges are then etched by HCl solution, leaving troughs in the GaN surface. A dripping strategy for the in-situ chemical etching is recommended that allows deep, alignment-free multiple AFM oxidation/etching works on the GaN surface without any need of substrate removal from the AFM platform. Repeated etching followed by AFM oxidation on a spot on a GaN surface resulting in a hole as deep as 800 nm was also demonstrated. Further, a preliminary evaluation of the porosity of the AFM-grown oxide indicates that the oxide ridges grown on GaN at an AFM cantilever moving speed of 300 nm/s are porous in structure, with an estimated porosity of 86%, which porosity could be reduced if longer resident time of the AFM cantilever on the target oxidation region was used.
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41258
Appears in Collections:[光電科學研究所] 期刊論文

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