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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41256

Title: Optical and conductive properties of indium-doped ZnO films deposited by atomic layer deposition using DEZn/TMIn and N2O
Authors: Chi-Ying Hsiao (蕭琦穎);Jyun-Syong Yang (楊竣雄);Jyh-Rong Gong (龔志榮);Dong-Yuan Lyu (呂東原);Tai-Yuan Lin (林 泰源);Cheng-Tao Lu (呂政道);Der-Yuh Lin (林得裕)
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2010
Issue Date: 2017-02-13T01:27:56Z
Abstract: Abstract: Indium-doped zinc oxide (IZO) films were deposited on (11-20) sapphire substrates at low
temperatures by atomic layer deposition (ALD) using diethyl-zinc (DEZn), trimethyl-indium
(TMIn) and nitrous oxide (N2O) as precursors. We evaluate the compositional and chemical
properties of ALD-grown IZO films using x-ray photoelectron spectroscopy (XPS). In addition, the
optical, structural, and conductive properties of the ALD-grown IZO films were characterized by
optical transmission and absorption spectroscopy, x-ray diffractometry, field-emission scanning
electron microscopy (FESEM), and Hall measurements. Under certain conditions, ALD-grown
IZO films exhibit more than 90% optical transmittance in the visible spectra with resistivities being
in the range of high 10-4 Ω-cm. Burstein-Moss shift effect was also observed in the In-incorporated
IZO films due to the high-doping background.
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41256
Appears in Collections:[光電科學研究所] 演講及研討會

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