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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41249

Title: Behaviors of AlxGa1−xN (0.5⩽x⩽1.0)/GaN short period strained-layer superlattices on the threading dislocation density reduction in GaN films
Authors: J.R. Gong
C.W. Huang
S.F. Tseng
T.Y. Lin
K.M. Lin
W.T. Liao
Y.L. Tsai
B.H. Shi
C.L. Wang
Contributors: 國立臺灣海洋大學:光電科學研究所
Keywords: Characterization
Semiconducting gallium compounds.
Line defects
Nitrides
Date: 2004
Issue Date: 2017-02-10T08:30:36Z
Publisher: Journal of Crystal Growth
Abstract: Abstract: GaN films were grown on c-Al2O3 substrates with the insertion of AlxGa1−xN (0.5⩽x⩽1.0)/GaN short period strained-layer superlattices (SPSLSs) at elevated temperatures. It appears that the insertion of an AlxGa1−xN (0.5⩽x⩽1.0)/GaN SPSLS having certain thickness and pair combinations is helpful to reduce the etching pit density (EPD) in GaN film for more than one order of magnitude. Cross-sectional transmission electron microscopic (XTEM) observations confirm the efficiency of AlxGa1−xN (0.5⩽x⩽1.0)/GaN intermediate SPSLSs on blocking threading dislocation (TD) propagation in GaN films. The presence of intermediate AlxGa1−xN (0.5⩽x⩽1.0)/GaN SPSLS in a GaN film is believed to encourage TD density reduction in the film through TD annihilation and de-multiplication processes involving interactions between two edge-type TDs.
Relation: 260(1-4)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41249
Appears in Collections:[光電科學研究所] 演講及研討會

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