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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41208

Title: Planar Hall effect of Permalloy films on Si(111), Si(100), and glass substrates
Authors: S.U. Jen;P. J. Wang;Y. C. Tseng;H. P. Chiang
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2009
Issue Date: 2017-02-10T02:47:26Z
Publisher: Applied Physics
Abstract: Abstract: Different thicknesses, t(f) = 7.5-100 nm, of Permalloy (Py) films were deposited on Si(111), Si(100), and glass substrates, respectively, at T(s)= 270 degrees C. The sensitivities (S(H)) of the planar Hall effect (PHE) and temperature coefficient of resistance (TCR) of the film samples were measured from room temperature to T=250 degrees C. When 10 nm <= t(f) <= 100 nm, S(H) increases as t(f) decreases, in agreement with theory. However, when tf < 10 nm, S(H) decreases instead due to the coalescence condition, as indicated by an abnormal increase in the sheet resistance R(rectangle) of the film sample. Moreover, we have studied the nonlinear deviation of the PHE signal at field vertical bar H vertical bar = 6 Oe, defined as xi, and the temperature stability of PHE sensitivity as [Delta S(H)/Delta T]. In summary, we find (A) the Py(10 nm)/Si(111) sample has the highest S(H)(RT) = 340 Omega/T because its surface is the smoothest with the lowest anisotropy field H(k); (B) the other properties, such as xi, [Delta S(H)/Delta T], and TCR, of the Py(10 nm )/Si(111) sample are inferior to those of the Py(10 nm)/glass sample; (C) xi remains almost the same, as RT <= T <= 100 degrees C; (D) negative TCR values of the Py/Si(111) and Py/Si(100) samples are related to the substrate contributions, e. g., TCR, thermal expansion coefficient alpha, and thermoelectric power beta of Si. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3068525]
Relation: 105(7)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41208
Appears in Collections:[光電科學研究所] 期刊論文

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