Abstract: The single-phase gamma-In2Se3 films with red room-temperature photoluminescence have been realized by atmospheric metal-organic chemical vapor deposition at the temperature range of 350 deg C to 500 deg C. The crystal structure of the gamma-In2Se3 films was determined by X-ray diffraction and Raman spectroscopy. From the temperature dependence of the free exciton line, the room-temperature energy gap of gamma-In2Se3 films is found to be about 1.947 eV. At 10 K, the free exciton emissions was observed and located at 2.145 eV. The temperature dependence of the near band-edge emission in the temperature region of 10 K to 300 K has been investigated. The measured peak energy of near band-edge emission redshifts by about 200 meV with increasing temperature from 10 K to 300 K, and is expressed by Eg(T) = 2.149 + ((-8.50 x 10-4)T2/(T + 75.5)) eV. This study was done to complete the reported information about gamma-In2Se3 thin films.