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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41197

Title: Structural and optical characterization of single-phase gamma-In2Se3 films with room-temperature photoluminescence
Authors: Lyu, D.Y
Lin, T.z
Chang, T.W
Lan S.M
Yang, T.N
Chiang, C.C
Chen, C.L.
Chiang, H.P.
Contributors: 國立臺灣海洋大學:光電科學研究所
Keywords: Verbindungshalbleiter
Selenid
metallorganische CVD-Beschichtung
Temperaturbereich
Kristallstruktur
Raumtemperatur
Bandlücke
Temperatureinfluss
Dünnschicht
Photolumineszenz
Indiumselenid
Date: 2010
Issue Date: 2017-02-10T02:13:55Z
Publisher: Journal of Alloys and Compounds
Abstract: Abstract: The single-phase gamma-In2Se3 films with red room-temperature photoluminescence have been realized by atmospheric metal-organic chemical vapor deposition at the temperature range of 350 deg C to 500 deg C. The crystal structure of the gamma-In2Se3 films was determined by X-ray diffraction and Raman spectroscopy. From the temperature dependence of the free exciton line, the room-temperature energy gap of gamma-In2Se3 films is found to be about 1.947 eV. At 10 K, the free exciton emissions was observed and located at 2.145 eV. The temperature dependence of the near band-edge emission in the temperature region of 10 K to 300 K has been investigated. The measured peak energy of near band-edge emission redshifts by about 200 meV with increasing temperature from 10 K to 300 K, and is expressed by Eg(T) = 2.149 + ((-8.50 x 10-4)T2/(T + 75.5)) eV. This study was done to complete the reported information about gamma-In2Se3 thin films.
Relation: 499(1)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41197
Appears in Collections:[光電科學研究所] 期刊論文

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