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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41180

Title: Imaging layer number and stacking order through formulating Raman fingerprints obtained from hexagonal single crystals of few layer graphene
Authors: Hwang JS;Lin YH;Hwang JY;Chang R;Chattopadhyay S;Chen CJ;Chen P;Chiang HP;Tsai TR;Chen LC;Chen KH
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2013
Issue Date: 2017-02-09T08:46:41Z
Publisher: Nanotechnology
Abstract: Abstract: Quantitative mapping of layer number and stacking order for CVD-grown graphene layers is realized by formulating Raman fingerprints obtained on two stepwise stacked graphene single-crystal domains with AB Bernal and turbostratic stacking (with ~30°interlayer rotation), respectively. The integrated peak area ratio of the G band to the Si band, A(G)/A(Si), is proven to be a good fingerprint for layer number determination, while the area ratio of the 2D and G bands, A(2D)/A(G), is shown to differentiate effectively between the two different stacking orders. The two fingerprints are well formulated and resolve, quantitatively, the layer number and stacking type of various graphene domains that used to rely on tedious transmission electron microscopy for structural analysis. The approach is also noticeable in easy discrimination of the turbostratic graphene region (~30° rotation), the structure of which resembles the well known high-mobility graphene R30/R2(±) fault pairs found on the vacuum-annealed C-face SiC and suggests an electron mobility reaching 14,700 cm(3) V(-1) s(-1). The methodology may shed light on monitoring and control of high-quality graphene growth, and thereby facilitate future mass production of potential high-speed graphene applications.
Relation: 24(1)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/41180
Appears in Collections:[光電科學研究所] 期刊論文

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