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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/38607

Title: Direct formation of InN-codoped p-ZnO/n-GaN heterojunction diode by solgel spin-coating scheme.
Authors: Huang CY;Lee YJ;Lin TY;Chang SL;Lian JT;Lin HM;Chen NC;Yang YJ
Contributors: 國立臺灣海洋大學:生命科學暨生物科技學系
Date: 2014
Issue Date: 2016-10-18T07:12:55Z
Publisher: Optics Letters
Abstract: Abstract: In this work p-ZnO/n-GaN heterojunction diodes were directly formed on the Si substrate by a combination of cost-effective solgel spin-coating and thermal annealing treatment. Spin-coated n-ZnO films on InN/GaN/Si wafers were converted to p-type polarity after thermal treatment of proper annealing durations. X-ray diffraction (XRD) analysis reveals that InN-codoped ZnO films have grown as the standard hexagonal wurtzite structure with a preferential orientation in the (002) direction. The intensity of the (002) peak decreases for a further extended annealing duration, indicating the greater incorporation of dopants, also confirmed by x-ray photoelectron spectroscopy and low-temperature photoluminescence. Hall and resistivity measurements validate that our p-type ZnO film has a high carrier concentration of 3.73×10¹⁷ cm⁻³, a high mobility of 210 cm²/Vs, and a low resistivity of 0.079 Ωcm. As a result, the proposed p-ZnO/n-GaN heterojunction diode displays a well-behaving current rectification of a typical p-n junction, and the measured current versus voltage (I-V) characteristic is hence well described by the modified Shockley equation. The research on the fabrication of p-ZnO/n-GaN heterojunctions shown here generates useful advances in the production of cost-effective ZnO-based optoelectronic devices.
Relation: 39(4)
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/38607
Appears in Collections:[生命科學系] 期刊論文

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