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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/38186

Title: Hydrogen Sensors with Double Dipole Layers Using a Pd-mixture-Pd-triple-layer Sensing Structure
Authors: Shao-Yen Chiu;Jung-Hui Tsai;Hsuan-Wei Huang;Kun-Chieh Liang;Tze-Hsuan Huang;Kang-Ping Liu;Tzung-Min Tsai;Kuo-Yen Hsu;Wen-Shiung Lour
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 2009
Issue Date: 2016-08-11T01:33:54Z
Publisher: Sensors and Actuators B: Chemical
Abstract: Abstract: This paper reports on new GaN sensors using a Pd-mixture-Pd triple-layer sensing structure to enhance their sensitivity to hydrogen at the tens of ppm level. The proposed hydrogen sensor biased with a constant voltage produced relatively high sensing responses of ∼4.84 × 105% at 10,100 ppm and ∼8.7 × 104% at 49.1 ppm H2 in N2. The corresponding barrier height variations are calculated to be 220 and 168 mV. When the sensor is biased by a constant current with maximum power consumption of 0.4 mW, a sensing voltage as an output signal showed a voltage shift of more than 17 V (the highest value ever reported) at 49.1 ppm H2 in N2. By comparison to Pd-deposited GaN sensors, the improvement in static-state performance is likely attributed to double dipole layers formed individually at the Pd–GaN interface and inside the mixture. Moreover, voltage transient response and current transient response to various hydrogen-containing gases were experimentally studied. The new finding is that the former response time is shorter than the latter one.
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/38186
Appears in Collections:[電機工程學系] 期刊論文

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