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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/38181

Title: GaN sensors with metal-oxide mixture for sensing hydrogen-containing gases of ultra-low concentration
Authors: Shao-Yen Chiu;Kun-Chieh Liang;Tze-Hsuan Huang;Kang-Ping Liu;Hsuan-Wei Huang;Jung-Hui Tsai;Wen-Shiung Lour
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 2009
Issue Date: 2016-08-10T03:25:16Z
Publisher: Japanese Journal of Applied Physics
Abstract: Abstract: The roles of micro-metal–oxide (MO) interfaces inside a sensing metal formed by coevaporating Pd and SiO2 in metal–semiconductor–metal GaN sensors are investigated. The porous property of the Pd and SiO2 mixture together with the presence of micro-MO interfaces gives rise to a highly efficient dissociation of hydrogen molecules and hence an enhanced barrier height variation (ΔphivB) of a reverse-biased Schottky diode. The measured ΔphivB increases from 294 to 392 mV at a concentration coefficient of 25 mV/decade as the hydrogen concentration increases from 2.13 to 10100 ppm H2/N2. Therefore, when the sensor is subjected to 0.02 ppm H2/N2, ΔphivB as high as 245 mV is still expected. The sensor in a 2.13 ppm H2/N2 ambience has a sensing response of 8.7×104. Excellent dynamic responses are demonstrated by switching voltage polarity or continuously changing hydrogen concentration, showing that the proposed structure is a promising hydrogen sensor.
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/38181
http://ntour.ntou.edu.tw:8080/ir/handle/987654321/38182
Appears in Collections:[電機工程學系] 期刊論文

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