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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/38179

Title: GaN hydrogen sensor with a Pd-SiO2 mixture forming sensing nanoparticles
Authors: S. Y. Chiu;H. W. Huang;K. C. Liang;T. H. Huang;K. P. Liu;J. H. Tsai;W. S. Lour
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 2009
Issue Date: 2016-08-10T03:15:35Z
Publisher: Electronics Letters
Abstract: Abstract: A high-performance GaN hydrogen sensor fabricated by a Pd-SiO2 mixture to form a rough sensing surface with pores and nanoparticles is investigated. Hydrogen atoms trapped on the GaN surface and within the mixture form two-dimensional and three-dimensional dipoles, respectively, depending on biased voltages. Thus three sensing regions are found in current-voltage characteristics. The sensing response and barrier-height variation are over 107 and 410 mV, which are the highest values ever reported. The response time is as short as 40 s, indicating the proposed hydrogen sensor is very promising for hydrogen detection.
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/38179
Appears in Collections:[電機工程學系] 期刊論文

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