National Taiwan Ocean University Institutional Repository:Item 987654321/38178
English  |  正體中文  |  简体中文  |  Items with full text/Total items : 27533/39387
Visitors : 2539988      Online Users : 30
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item:

Title: High-sensitivity metal-semiconductor-metal hydrogen sensors with a mixture of Pd and SiO2 forming three-dimensional dipoles
Authors: Shao-Yen Chiu;Hsuan-Wei Huang;Tze-Hsuan Huang;Kun-Chieh Liang;Kang-Ping Liu
Jung-Hui Tsai
Wen-Shiung Lour
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 2008
Issue Date: 2016-08-10T02:57:28Z
Abstract: Abstract: New metal–semiconductor–metal hydrogen sensors
are fabricated to take advantages of symmetrically bidirectional
detection. Unlike commonly used single catalytic metal layers,
a mixture of Pd and SiO2 inserted between Pd and GaN was
employed as sensing media. There are three sensing regions (i.e.,
2-D dipole, transient, and 3-D dipole regions) observed in static
response. Room-temperature sensitivity larger than 107 was obtained
in 1080-ppm H2/N2 ambient. The barrier-height variation
is as high as 422 mV. To our best knowledge, these are the highest
values ever reported. According to transient response, a short
response time of 70 s is obtained at room temperature. Thus, a
newly developed concept of forming 3-D dipoles is introduced to
possibly explain experimental results.
Appears in Collections:[Department of Electrical Engineering] Periodical Articles

Files in This Item:

File Description SizeFormat
High-Sensitivity Metal–Semiconductor–Metal.pdf362KbAdobe PDF49View/Open

All items in NTOUR are protected by copyright, with all rights reserved.


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback