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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/38178

Title: High-sensitivity metal-semiconductor-metal hydrogen sensors with a mixture of Pd and SiO2 forming three-dimensional dipoles
Authors: Shao-Yen Chiu;Hsuan-Wei Huang;Tze-Hsuan Huang;Kun-Chieh Liang;Kang-Ping Liu
Jung-Hui Tsai
Wen-Shiung Lour
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 2008
Issue Date: 2016-08-10T02:57:28Z
Publisher: IEEE ELECTRON DEVICE LETTERS
Abstract: Abstract: New metal–semiconductor–metal hydrogen sensors
are fabricated to take advantages of symmetrically bidirectional
detection. Unlike commonly used single catalytic metal layers,
a mixture of Pd and SiO2 inserted between Pd and GaN was
employed as sensing media. There are three sensing regions (i.e.,
2-D dipole, transient, and 3-D dipole regions) observed in static
response. Room-temperature sensitivity larger than 107 was obtained
in 1080-ppm H2/N2 ambient. The barrier-height variation
is as high as 422 mV. To our best knowledge, these are the highest
values ever reported. According to transient response, a short
response time of 70 s is obtained at room temperature. Thus, a
newly developed concept of forming 3-D dipoles is introduced to
possibly explain experimental results.
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/38178
Appears in Collections:[電機工程學系] 期刊論文

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