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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/37904

Title: Photoluminescence and Raman scattering characterization of Cu2ZnSiQ4(Q = S, Se) single crystals
Authors: S. Levcenco
D.O. Dumcenco
Y.P. Wang
J.D. Wu
Y.S. Huang
E. Arushanov
V. Tezlevan
K.K. Tiong
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Raman scattering
Crystal growth
Semiconductors
Optical properties
Photoluminescence
Date: 2012
Issue Date: 2016-05-23T06:58:15Z
Publisher: Optical Materials
Abstract: Abstract:Photoluminescence (PL) and Raman scattering were used to characterize the single crystals of Cu2ZnSiQ4(Q = S, Se). Thin-blade single crystals of Cu2ZnSiQ4were grown by chemical vapor transport techniqueusing iodine as a transport agent. PL spectrum of Cu2ZnSiS4showed several near-band-edge emissionlines and two broad bands at lower energy side, while only an asymmetric broad band was detectedfor Cu2ZnSiSe4. The vibrational properties and the influence of the anion substitution on the phonon spec-tra were studied by Raman spectroscopy. The substitution of sulfur by selenium leads to a down shift ofabout 169 cm1for the most intense A1mode due to the mass effect and lower force constants for theselenium containing compound Photoluminescence and Raman scattering characterization of Cu2ZnSiQ4 (Q = S, Se) single crystals.
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/37904
Appears in Collections:[電機工程學系] 期刊論文

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