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Title: Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate
Authors: Hung-Pin Hsu;Pong-Hong Yang;Jeng-Kuang Huang;Po-Hung Wu;Ying-Sheng Huang;Cheng Li;Shi-Hao Huang;Kwong-Kau Tiong
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 2013
Issue Date: 2016-05-23T06:22:33Z
Publisher: Condensed Matter Physics
Abstract: Abstract:We report a detailed characterization of a Ge/Si0.16Ge0.84 multiple quantum well (MQW) structure on Ge-on-Si virtual substrate (VS) grown by ultrahigh vacuum chemical vapor deposition by using temperature-dependent photoreflectance (PR) in the temperature range from 10 to 300 K. The PR spectra revealed a wide range of optical transitions from the MQW region as well as transitions corresponding to the light-hole and heavy-hole splitting energies of Ge-on-Si VS. A detailed comparison of PR spectral line shape fits and theoretical calculation led to the identification of various quantum-confined interband transitions. The temperature-dependent PR spectra of Ge/Si0.16Ge0.84 MQW were analyzed using Varshni and Bose-Einstein expressions. The parameters that describe the temperature variations of various quantum-confined interband transition energies were evaluated and discussed.
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/37900
Appears in Collections:[電機工程學系] 期刊論文

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