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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/37897

Title: Composition dependent lattice dynamics in MoS x Se(2– x) alloys
Authors: J. Jadczak
D. O. Dumcenco
Y. S. Huang
Y. C. Lin
K. Suenaga
P. H. Wu
H. P. Hsu
K. K. Tiong
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Raman spectra
X-ray diffraction
Date: 2014
Issue Date: 2016-05-23T06:00:01Z
Publisher: Journal Of Applied Physics
Abstract: Abstract:we report on room temperature, polarization-resolved Raman scattering measurements on layered crystals of the series MoS x Se(2– x ) (0 ≤ x ≤ 2) grown by chemical vapor transport technique. The results reveal two distinct sets of features related to the E12gE2g1 and A1 g modes of pure members of series. As composition x changes, the in-plane E12gE2g1 mode shows two-mode behavior, whereas the out-of-plane A1 g mode presents more complex evolution. The MoSe2-like branch reveals the splitting associated with the altering arrangement of S and Se atoms around Mo and the resulting changes in the dipole moment of the molecule. The X-ray diffraction measurements confirm that the samples are single-phase materials of 2H-type structure over the entire range of the sulfide composition x, while the scanning transmission electron microscopy imaging reveals a random arrangement of the S and Se atoms. Modified random-element-isodisplacement model is adopted to predict the behavior of the individual modes in the alloys. The model successfully confirms the two-mode behavior exhibited by the MoS x Se(2–x) series.
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/37897
Appears in Collections:[電機工程學系] 期刊論文

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