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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/37846

Title: Advanced Selective Emitter Structures by Laser Opening Technique for Industrial Multi-crystalline Silicon Solar Cells
Authors: Jyh-Jier Ho
Yuang-Tung Cheng
Jia-Jhe Liou
Ching-Hsi Lin
Dimitre Z. Dimitrov
Alex Hsu
Song-Yeu Tsai
Chien-Kun Wang
William Lee
Kang L. Wan
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: solar cells
laser materials processing
elemental semiconductors
Date: 2010-11
Issue Date: 2016-05-16T06:12:23Z
Publisher: Electronics Letters
Abstract: Abstract:a laser opening technique is employed as the photolithography process to form selective emitter (SE) structures on multi-crystalline silicon (mc-Si) substrates for the large-area (156 × 156 × mm2) solar-cell industry. The best efficiency of 16.35% is obtained with the developed SE structure after a damage removal process with optimisation of heavily and lightly doped dopants, which yields a gain of 0.88% absolute compared with that of a reference cell. Significantly, the SE mc-Si solar cell without the damage removal process can also reach a gain of 0.48% absolute. The developed SE process has simplicity, reliability, is fast, cost-effective, and could be effectively applied to mass production in industrial applications.
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/37846
Appears in Collections:[電機工程學系] 期刊論文

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