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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/37840

Title: Sensing properties of resistive-type hydrogen sensors with a Pd–SiO2 thin-film mixture
Authors: Chieh Loa
Shih-Wei Tanb
Chih-Yin Weib
Jung-Hui Tsaic
Wen-Shiung Lour
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Sensor
Hydrogen
Mixture
Palladium
Resistance
Resistivity
Date: 2013-01
Issue Date: 2016-05-16T05:44:03Z
Publisher: International Journal of Hydrogen Energy
Abstract: Abstract:Zigzag-shaped pure-Pd thin film and Pd–SiO2 thin-film mixture as resistive-type hydrogen sensors were deposited on cover-glass substrates through a multiple-boat thermal evaporator. Temperature dependence of the resistance of the pure-Pd resistive-type sensor showed a relative sensitivity of 3.2% at 80 °C with a temperature coefficient of the resistance (TCR) of 0.058%/°C. Sensing properties of the Pd–SiO2 resistive-type sensor responding to the presence of 1% H2/N2 are much better than those of the pure-Pd one, including a higher relative sensitivity (9%–7.7%), a faster response time (10 s–30 s), and a lower detection concentration limit (50 ppm–100 ppm). A higher dissociation rate and a faster diffusion rate due to porous-like properties and more hydrogen atoms caught due to oxygen associated with the Pd–SiO2 thin-film mixture explain why the Pd–SiO2 resistive-type sensor has a higher relative sensitivity with a shorter response time.
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/37840
Appears in Collections:[電機工程學系] 期刊論文

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