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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/37784

Title: High-performance InGaP/GaAs superlattice-emitter bipolar transistor with multiple S-shaped negative-differential-resistance switches under inverted operation mode
Authors: Jung-Hui Tsai
Chia-Hong Huang
Wen-Shiung Lour
Yi-Ting Chao
Jhih-Jhong Ou-Yang
Jia-Cing Jhou
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Confinement effect
Pseudomorphic base
Superlattice emitter
Turn-on voltage
Avalanche multiplication
Date: 2012
Issue Date: 2016-05-09T08:15:27Z
Publisher: Thin Solid Films
Abstract: Abstract:Based on the employments of an InGaP/GaAs superlattice emitter and a thin InGaAs pseudomorphic base structure, the device with excellent transistor action and multiple S-shaped negative-differential-resistance (NDR) switching behavior are achieved. Under normal transistor operation mode, the tunneling electrons could easily transport from InGaP/GaAs superlattice over the n-GaAs emitter layer into the thin InGaAs pseudomorphic base region for reducing the base–emitter turn-on voltage and promoting the current gain. In particular, an interesting multiple S-shaped NDR behavior is observed under inverted operation mode due to the avalanche multiplication and confinement effect for electrons at the interface between superlattice and emitter layer, respectively. As an appropriate voltage source and a load resistor are applied, three stable operation points are obtained.
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/37784
Appears in Collections:[電機工程學系] 期刊論文

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