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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/37782

Title: An InP/InGaAs metamorphic delta-doped heterojunction bipolar transistor with high current gain and low offset voltage
Authors: Jung-Hui Tsai
Wen-Shiung Lour
Yi-Ting Chao
Sheng-Shiun Ye
Yung-Chun Ma
Jia-Cing Jhou
You-Ren Wu
Jhih-Jhong Ou-Yang
Contributors: 國立臺灣海洋大學:電機工程學系
Keywords: Current gain
Heterojunction bipolar transistor
Offset voltage
Date: 2012-10
Issue Date: 2016-05-09T08:11:11Z
Publisher: Thin Solid Films
Abstract: Abstact:excellent dc performance of an InP/InGaAs metamorphic δ-doped heterojunction bipolar transistor (HBT) using a linearly graded InxGa1 − xP metamorphic buffer layer grown on GaAs substrate is demonstrated. The employment of a δ-doped sheet between two undoped spacer layers could eliminate the potential spike at base–emitter junction and increase the effective barrier, which could prevent the hole injection from base into emitter. A maximum current gain of 255, a low offset voltage of 105 mV, and a small second (third) harmonic distortions of 0.545 (− 0.05) at VCE = 2.5 V are obtained. The current gain and offset voltage are the best values than that of the previous InP/InGaAs metamorphic HBT.
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/37782
Appears in Collections:[電機工程學系] 期刊論文

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