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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/37781

Title: Comparative Study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers
Authors: Jung-Hui Tsai;Sheng-Shiun Ye;Der-Feng Guo;Wen-Shiung Lour
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 2012
Issue Date: 2016-05-09T08:03:23Z
Abstract: Abstract:Influence corresponding to the position of δ-doped supplied layer on InGaP/GaAs high electron mobility transistors is comparatively studied by two-dimensional simulation analysis. The simulated results exhibit that the
device with lower δ-doped supplied layer shows a higher gate potential barrier height, a higher saturation output
current, a larger magnitude of negative threshold voltage, and broader gate voltage swing, as compared to the
device with upper δ-doped supplied layer. Nevertheless, it has smaller transconductance and inferior high-frequency
characteristics in the device with lower δ-doped supplied layer. Furthermore, a knee effect in current–voltage curves
is observed at low drain–to–source voltage in the two devices, which is investigated in this article.
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/37781
Appears in Collections:[電機工程學系] 期刊論文

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