English  |  正體中文  |  简体中文  |  Items with full text/Total items : 27320/39164
Visitors : 2478695      Online Users : 38
RC Version 4.0 © Powered By DSPACE, MIT. Enhanced by NTU Library IR team.
Scope Adv. Search

Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/37781

Title: Comparative Study of InGaP/GaAs high electron mobility transistors with upper and lower delta-doped supplied layers
Authors: Jung-Hui Tsai;Sheng-Shiun Ye;Der-Feng Guo;Wen-Shiung Lour
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 2012
Issue Date: 2016-05-09T08:03:23Z
Abstract: Abstract:Influence corresponding to the position of δ-doped supplied layer on InGaP/GaAs high electron mobility transistors is comparatively studied by two-dimensional simulation analysis. The simulated results exhibit that the
device with lower δ-doped supplied layer shows a higher gate potential barrier height, a higher saturation output
current, a larger magnitude of negative threshold voltage, and broader gate voltage swing, as compared to the
device with upper δ-doped supplied layer. Nevertheless, it has smaller transconductance and inferior high-frequency
characteristics in the device with lower δ-doped supplied layer. Furthermore, a knee effect in current–voltage curves
is observed at low drain–to–source voltage in the two devices, which is investigated in this article.
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/37781
Appears in Collections:[電機工程學系] 期刊論文

Files in This Item:

File Description SizeFormat

All items in NTOUR are protected by copyright, with all rights reserved.


著作權政策宣告: 本網站之內容為國立臺灣海洋大學所收錄之機構典藏,無償提供學術研究與公眾教育等公益性使用,請合理使用本網站之內容,以尊重著作權人之權益。
網站維護: 海大圖資處 圖書系統組
DSpace Software Copyright © 2002-2004  MIT &  Hewlett-Packard  /   Enhanced by   NTU Library IR team Copyright ©   - Feedback