Abstract:Influence corresponding to the position of δ-doped supplied layer on InGaP/GaAs high electron mobility transistors is comparatively studied by two-dimensional simulation analysis. The simulated results exhibit that the
device with lower δ-doped supplied layer shows a higher gate potential barrier height, a higher saturation output
current, a larger magnitude of negative threshold voltage, and broader gate voltage swing, as compared to the
device with upper δ-doped supplied layer. Nevertheless, it has smaller transconductance and inferior high-frequency
characteristics in the device with lower δ-doped supplied layer. Furthermore, a knee effect in current–voltage curves
is observed at low drain–to–source voltage in the two devices, which is investigated in this article.