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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/37558

Title: Performance improved by point-contact electrodes and SiO2/SiNX layers at rear
Authors: Sheng-Shih Wang
Jyh-Jier Ho
Duo-Sheng Chen
Jia-Show Ho
Chen-Hsun Du
Song-Yeu Tsai
Hsien-Seng Hung
K. L. Wang
solar cells
Keywords: OBIC
contact resistance
mass production
quantum point contacts
silicon compounds
Date: 2014-11
Issue Date: 2016-03-21T06:43:45Z
Publisher: Electronics Letters
Abstract: Abstract:The rear point-contact fabricated through the laser-opening technique for mass production was applied on the photovoltaic cells. Laser opening, different layers for passivation (SiO2) and protection (SiNX) were employed to investigate their impact on the performances of solar cells. The SiNX layer protects the SiO2 layer from being burnt through by aluminium paste at the co-firing step. A conversion efficiency (η) of 16.91% with an open-circuit voltage of 628 mV was obtained for the optimal cell, a stack structure with SiO2 and SiNX layers, which also achieves a lower contact resistance of 6.66 mΩ·cm2 and a higher light-beam-induced current of 80.77 mA/cm2. The optimal cell also showed longer lifetime and 3-4% increased quantum efficiency in the visible wavelength range. Therefore, the developed process has simplicity and reliability, is fast and cost-effective and could be applied to industrial applications.
URI: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/37558
Appears in Collections:[電機工程學系] 期刊論文

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