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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/36550

Title: Effects of indium composition fluctuation on strain fields of InGaAs/GaAs quantum dots
Authors: T. R. Lin;K. B. Hong;M. K. Kuo
Contributors: NTOU:Department of Mechanical and Mechatronic Engineering
Date: 2012-11
Issue Date: 2015-05-19T06:29:41Z
Publisher: Journal of Science and Innovation
Abstract: A model based on theory of linear elasticity is successfully developed to analyze the strain fields in and around InGaAs quantum dots. In the model, the initial stresses of quantum dots arising from the lattice mismatch of the heterostructure introduce elastic deformation in the entire quantum-dot nanostructure. The total strain fields of quantum dots consist of initial strains and relaxation strains. Relaxation strains are determined using the finite element method. The calculated relaxation strains agree well with previous experimental results using high-resolution electron microscopy imaging. The numerical results also reveal that the strain fields of IncGa1-cAs quantum dots are significantly different from their counterparts in mean concentration In0.31Ga0.69As quantum dots. These differences are attributed to variations in the chemical composition of quantum dots.
Relation: 2(4), pp.215-222
URI: http://ntour.ntou.edu.tw/handle/987654321/36550
Appears in Collections:[機械與機電工程學系] 期刊論文

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