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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/34761

Title: 利用熱退火氧化銀薄膜製作寬頻表面電漿增強光激螢光基板
Fabrication of broadband surface-plasmon enhanced photoluminescence substrate based on annealed AgOx thin film
Authors: Bing-Hann Leu
呂秉翰
Contributors: NTOU:Institute of Optoelectronic Sciences
國立臺灣海洋大學:光電科學研究所
Keywords: 光激發螢光;拉曼散射;表面電漿;熱退火
photoluminescence;Raman scattering;surface plasmon;Thermal anneal
Date: 2013
Issue Date: 2013-10-07T02:46:12Z
Abstract: 本論文主要利用熱退火氧化銀薄膜來製作一種寬頻表面電漿增強的基板,該基板表面充 滿奈米銀顆粒並且使用了一層5nm 厚的SiO2 來做為保護層。實驗中使用SEM 影像來分析不同溫度下退火處理的基板析出的銀顆粒數量大小生成過程,透過拉曼散射實驗與穿透係數的量測分析基板的特性。實驗中也探討退火處理時SiO2 對氧化銀與銀顆粒的影響。最後基板上鍍了75nm 厚的染料層來進行光激發與時間解析光激發螢光實驗,染料各別使用DCJTB、ADN、Alq3,激發狀態下各別會放出紅、藍、綠三種光。實驗結果發現我們製作的基板對DCJTB、ADN、Alq3 皆有螢光增強與發光週期縮短的效果,螢光各別有3.85 倍、2.39 倍、4.12倍的增強,另外實驗結果野關查到DCJTB 發光生命期減少12%、從1.28ns 減短至1.08nm,ADN 的生命期減少16%、從0.78ns 縮短至0.70ns,而Alq3 的發光生命期也減少26%、從8.24ns縮短至6.12ns。
In this thesis, we fabricate a broadband surface-plasmon enhanced photoluminescence substrate by using AgOx film through annealing process. When AgOx film is annealed, it will form a layer with nano-sized silver particles on the substrate surface. A 5nm thick SiO2 is also deposited on the substrate as a buffer layer which also serves as a protection layer. We analyze the formation of the silver nanoparticles by SEM images, examine the characteristics of the substrate by UV-vis and Raman measurements. The optimal fabrication parameters for a surface-plasmon substrate by using this method can be obtained through these analysis and the effects caused by SiO2 is also considered. Finally, we deposit a 75nm fluorescent material layer on the substrate for photoluminescence and time-resolve photoluminescence test. Three different fluorescent materials are used separately: DCJTB、ADN、Alq3, which emits red, blue and green light respectively after excitation. Results indicate that the substrate had successfully enhanced the photoluminescence intensity of the three materials and their life-times were also shortened. The intensity of photoluminescence had been enhanced by 3.85, 2.39 and 4.12 folds respectively, 12%, 16%, 26% reductions in lifetime are also observed.
URI: http://ethesys.lib.ntou.edu.tw/cdrfb3/record/#G0010088016
http://ntour.ntou.edu.tw/handle/987654321/34761
Appears in Collections:[光電科學研究所] 博碩士論文

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