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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/33562

Title: Fabrication of ZnO thin film transistors by atomic force microscopy nanolithogrophy through zinc thin films
Authors: Jeff T. H. Tsai;Ben H. B. Lee;Ming S. Yang
Contributors: 國立臺灣海洋大學:光電科學研究所
Date: 2009
Issue Date: 2013-04-08T02:07:59Z
Publisher: PHYSICAL REVIEW B
Abstract: Abstract:Zinc oxide (ZnO) thin film transistors were fabricated by local anodic oxidation (LAO) of polycrystalline zinc film using an atomic force microscope (AFM). Nanometer-thin zinc film can be locally transformed into p-type zinc oxide by an anodic oxidation technique using an AFM at room temperature. With this fabrication process, we have fabricated a backgate, Schottky-barrier-contact type thin film ZnO transistor. This fabrication requires no semiconductor material to produce transistors, only conventional metal film. The fabrication creates active area and source/drain contacts through simple AFM oxidation, with no requirement for additional semiconductor thin film deposition and photolithography. A representative LAO thin film transistor fabricated in this study exhibited a field-effect mobility of 23.6 cm2/V s, a peak transconductance of 15.8 μS, and an Ion/Ioff ratio of 106. To the best of our knowledge, the mobility value attained for this LAO thin film transistor is higher than that of any previously reported amorphous-silicon-based thin film transistors. Its peak transconductance and Ion/Ioff ratio are also enhanced compared with a backgate field-effect transistor with the same amorphous silicon channel as utilized in conventional thin film transistors.
Relation: 80(24), pp.245215-1-245215-4
URI: http://ntour.ntou.edu.tw/handle/987654321/33562
Appears in Collections:[光電科學研究所] 期刊論文

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