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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/33447

Title: On-Chip Fabrication of Well-Aligned and Contact-Barrier-Free GaN Nanobridge Devices with Ultrahigh Photocurrent Responsivity
Authors: Reui-San Chen;Shiao-Wen Wang;Zon-Huang Lan;Jeff Tsung-Hui Tsai;Chien-Ting Wu;Li-Chyong Chen;Kuei-Hsien Chen;Ying-Sheng Huang;Chia-Chun Chen
Contributors: 國立臺灣海洋大學:光電科學研究所
Keywords: gallium nitride;nanobridges;nanowires;photoconductivity;responsivity
Date: 2008-07
Issue Date: 2013-04-01T06:24:34Z
Publisher: Small
Abstract: Abstract:
Building nanobridges: Direct integration of an ensemble of GaN nanowires (n) onto a microchip produces a viable nanobridge (NB) device with good alignment and contact performance, the design of which demonstrates the potential of nanowires for sensor development. These GaN NBs have strong surface-enhanced photoconductivity with ultrahigh responsivity (see graph).
Relation: 4(7), pp.925–929
URI: http://ntour.ntou.edu.tw/handle/987654321/33447
Appears in Collections:[光電科學研究所] 期刊論文

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