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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/33445

Title: Self-aligned gate dielectric in carbon nanotube field-effect transistors by anodic oxidation of aluminium
Authors: Jeff T.H. Tsai;Wei-Syun Wang;Szu-Hung Chen;Chia-Liang Sun
Contributors: 國立臺灣海洋大學:光電科學研究所
Keywords: carbon nanotube;field effect transistor;anodic oxidation
Date: 2013
Issue Date: 2013-04-01T06:09:19Z
Publisher: Journal of Experimental Nanoscience
Abstract: Abstract:We demonstrate a process of fabricating carbon nanotube field-effect transistors with self-aligned gate insulators by anodic oxidation of aluminium. We use rapid thermal annealed multi-walled carbon nanotubes (CNTs) as the active material overlaid across an aluminium gate. The porous nanotube bundles allowed moisture from the air to penetrate, and oxidise the aluminium by anodic oxidation to construct a self-assembled aluminium oxide in the area where the CNTs were overlaid. Electron dispersive spectroscopy analysis of this oxidised surface confirmed the formation of self-aligned Al2O3. The metal-oxide-carbon nanotube transistors were compared to conventional nanotube transistors which have silicon dioxide as the gate insulator. Our results show that the self-aligned gate insulator produced by the anodic oxidisation of aluminium had better transistor performance. This is a promising process for the fabrication of nano-transistors in which embedded nanowires or nanotubes are the functional material in field-effect transistor applications.
Relation: 8(2), pp.138-144
URI: http://ntour.ntou.edu.tw/handle/987654321/33445
Appears in Collections:[光電科學研究所] 期刊論文

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