MOS solar cells with oxides deposited by sol-gel processing

Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/32922

Title:	MOS solar cells with oxides deposited by sol-gel processing
Authors:	Chia-Hong Huang;Chung-Cheng Chang;Jung-Hui Tsai
Contributors:	NTOU:Department of Electrical Engineering 國立臺灣海洋大學:電機工程學系
Date:	2011-11
Issue Date:	2012-06-18T07:48:39Z
Publisher:	Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Abstract:	abstract:It is proposed that the metal-oxide-semiconductor (MOS) solar cells with sol-gel oxides deposited by spin coating are produced in this study. This sol-gel-derived SiO2 layer is not very thin and the deviation in the thickness of the sol-gel layer is not slight. In general, the characteristics of MOS solar cells are significantly affected by the thickness of the SiO2 layer. Particularly, the thermal grown oxide thickness required is less than 2nm for MOS solar cell applications. It is useful for large-scale and large-amount manufacturing that the influence of nonuniformity of oxide thickness on the characteristics of MOS solar cells with sol-gel oxides is reduced. It is observed that the short-circuit current density (Jsc) of 15.56 mA/cm2, the open-circuit voltage (Voc) of 0.49V, the fill factor (FF) of 0.723 and the conversion efficiency (η%) of 5.44% are obtained by means of the current-voltage (I-V) measurements under AM 1.5 illumination at 25°C in the MOS solar cell with sol-gel oxides.
Relation:	pp.002878-002880
URI:	http://ntour.ntou.edu.tw/handle/987654321/32922
Appears in Collections:	[電機工程學系] 演講及研討會

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