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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/32906

Title: The Characterization and Fabrication of Pyroelectric Infrared Sensor and Application of Thermal Image Array
Authors: Chung Cheng Chang
Contributors: NTOU:Department of Electrical Engineering
國立臺灣海洋大學:電機工程學系
Keywords: Pyroelectric Infrared Sensor;Pyroelectric Coefficient;Polarization
Date: 2003
Issue Date: 2012-06-18T07:48:14Z
Publisher: 第七屆奈米工程暨微機電系統技術研討會/國科會微機電系統成果發表會
Abstract: The pyroelectric infrared (PIR) sensor with the lead-titanate (PbTiO3) thin film has been successfully fabricated. A RF planar magnetron sputter was used to deposit PbTiO3 thin film. A perovskite thin film can be obtained. From the properties measurement we can obtain the remanent polarization Pr = 20.8 mc/cm 2 and coercive electric field Ec = 79.365 kV/cm. The pyroelectric coefficient of 1.09× 10-5 C/m2 K at 50 °C was measured as a function of temperature. In addition, the fabricated PIR sensor properties is RV = 600 (VW-1)when chopper frequency is 0.3 Hz. D* = 7.3 × 105cm Hz1/2 W-1 for a modulation frequency of 0.5 Hz. In this experiment, the 4 ×4 array for PIR sensor is also constructed and tested.
URI: http://ntour.ntou.edu.tw/handle/987654321/32906
Appears in Collections:[電機工程學系] 演講及研討會

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