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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/30964

Title: 鋯鈦酸鉛微橋結構聲波感測元件之製作及其應用
Fabrication and Application of Pb(Zr0.52Ti0.48)O3 Microbridge Structure Acoustic Wave Sensor
Authors: Chen-Huan Yang
楊振寰
Contributors: NTOU:Department of Electrical Engineering
國立臺灣海洋大學:電機工程學系
Keywords: 鋯鈦酸鉛;蝕刻技術;犧牲層技術
lead zirconate titanate;etching technique;sacrificial layer technology
Date: 2012
Issue Date: 2012-04-16T03:23:22Z
Abstract:   近年來由於微機電製程技術的成熟及穩定,經由不同的蝕刻技術及蝕刻選擇性,許多懸浮結構及立體結構被應用於感測元件上,進一步可達成體積微小化,更容易與後端電路整合成智慧型感測系統。本論文主要利用微機電製程技術導入蝕刻技術及犧牲層技術,使用矽基板製作完成微橋結構鋯鈦酸鉛聲波感測元件。   聲波感測元件製作方面,犧牲層及支撐層分別選擇鋁及二氧化矽,蝕刻溶液在鋁及二氧化矽上具有優越的蝕刻選擇性,有利於製程最後將犧牲層完全移除掏空。   本論文所製作之鋯鈦酸鉛薄膜,其共振頻率為90MHz,反共振頻率為158.75MHz,殘留極化量為29.61 ,矯頑電場為20.8 ,利用此薄膜製作之聲波感測元件,其低頻靈敏度範圍為-210 ~-225 ,頻率在100kHz時靈敏度為最高值-209.76 ,高頻靈敏度範圍為-196 ~-210 ,頻率在7.5MHz時靈敏度為最高值-195.37 ,當感測頻率越接近共振頻率時,靈敏度及聲場強度有逐漸提高的趨勢。本論文所製作之聲波感測元件,其感測聲場屬於全指向式場形,更有利於高頻聲波測距及影像系統之整合。
In recent years, as the micro-electro-mechanical system technology becomes mature and stable, many suspension structures and spatial structures are applied to sensing elements using different etching techniques and etching selectivity, further realizing microminiaturized volume. As a result, they are easier to be integrated with back end circuit into an intelligent sensing system. This study introduced etching technique and sacrificial layer technology into micro-electro-mechanical system technology, and used silicon substrate to complete the microbridge structured lead zirconate titanate sound sensing element. In the fabrication processes of acoustic wave sensor, the sacrificial layer and supporting layer were made of aluminum and silica respectively, the etching solution had superior etching selectivity for aluminum and silica. It was helpful to detaching and undercutting the sacrificial layer completely at the end of process. The resonance frequency of the obtained lead zirconate titanate membrane was 90MHz, the antiresonance frequency was 158.75MHz, the residual polarization was 29.61 , and the coercive electric field was 20.8 . The low frequency sensitivity range of the acoustic wave sensor made of this membrane was -210 ~-225 , the maximum value -209.76 of sensitivity occurred when the frequency was 100kHz. The high frequency sensitivity range was -196 ~-210 , the maximum value -195.37 of sensitivity occurred when the frequency was 7.5MHz. The sensitivity and sound field strength increased gradually as the sensing frequency approached to the resonance frequency. The sensing sound field of the sound sensing element in this study was in an all-directional field form, thus was more favorable to the integration of high frequency sound ranging and image system.
URI: http://ethesys.lib.ntou.edu.tw/cdrfb3/record/#G0M97530016
http://ntour.ntou.edu.tw/handle/987654321/30964
Appears in Collections:[電機工程學系] 博碩士論文

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