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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28798

Title: Integrated a ZnSe MSM Photodiode and an InGaP/GaAs HBT on a GaAs Substrate for High Sensitivity Short Wavelength Photodetector
Authors: Ming Yao Chen;Chung Cheng Chang
Contributors: NTOU:Department of Electrical Engineering
國立臺灣海洋大學:電機工程學系
Date: 2009-08
Issue Date: 2011-10-21T02:40:40Z
Publisher: IEEE Sensors Journal
Abstract: Abstract:A ZnSe MSM photodiode and an InGaP/GaAs HBT have been integrated successfully on a GaAs substrate by use of the selective-area epitaxy technique. The optical and electrical characterizations of the integrated photoreceiver as well as individual components used in this device structure were estimated. Photocurrent induced from the metal-semiconductor-metal (MSM) photodiode was amplified linearly by a common-emitter circuit composed of a HBT. A current amplification ratio and a voltage amplification sensitivity of the integrated device measured in this work were 20.8 and -29.6 mV/mu W, respectively. The result does not only demonstrate the high sensitivity monolithic photoreceiver but indicates the potential of the selective-area epitaxy technique in the development of WBG-based short wavelength integrated devices.
Relation: 9(8), pp.902-907
URI: http://ntour.ntou.edu.tw/handle/987654321/28798
Appears in Collections:[電機工程學系] 期刊論文

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