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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28793

Title: Fabrication and Characterization of PZT thin Film Ultrasonic Devices
Authors: Chung-Cheng Chang;Kau-Hsiung Chen
Contributors: NTOU:Department of Electrical Engineering
Keywords: PZT thin film;ultrasonic Devices
Date: 2000
Issue Date: 2011-10-21T02:40:35Z
Publisher: Journal of the Chinese Institute of Engineers
Abstract: Abstract:The Purpose of this study was to fabricate and analyze high sensitivity PZT thin film ultrasonic sensors. In this experiment, PZT material, silicon substrates and the RF planar magnetron sputtering system were adopted to deposit PZT thin films onto silicon diaphragms for ultrasonic sensors. Experimentally, the sensitivity of the devices was measured for frequencies ranging from 100KHz to 4 MHz, where the maximum transmission and reception sensitivities were 74 µBar/dBV and –68dBV/µBar at 4 MHz. The sensitivity increased at higher frequencies, indicating that the PZT thin film ultrasonic devices are suitable for application as ultrasonic wave sensors at high operating frequencies. The experiment also demonstrated that the fabricated ultrasonic devices with poled PZT thin film have better transmission and reception responses than devices with unpoled PZT thin film.
Relation: 23(2), pp.179-184
URI: http://ntour.ntou.edu.tw/handle/987654321/28793
Appears in Collections:[電機工程學系] 期刊論文

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