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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28783

Title: Comparison of Performance of Integrated Photodetectors Based on ZnS and ZnSe Metal–Semiconductor–Metal Photodiodes
Authors: Ming Yao Chen;Chung Cheng Chang
Contributors: NTOU:Department of Electrical Engineering
Date: 2009
Issue Date: 2011-10-21T02:40:25Z
Publisher: Japanese Journal of Applied Physics
Abstract: Abstract:The successful fabrication of monolithically integrated photodetectors composed of a heterojunction bipolar transistor (HBT) and a metal–semiconductor–metal (MSM) photodiode was achieved by a patterned oxide growth technique. The photoresponsivities of the ZnS and the ZnSe MSM photodiodes were 0.028 and 0.08 A/W, respectively. Comparison of the performance in terms of optical and electrical characteristics between the ZnS- and the ZnSe-based integrated photodetectors were carried out; at a bias of 5 V, the current amplification ratios were 18.2 and 20.8, respectively. The maximal measurable input optical power intensities were 273 µW for ZnS-based integrated photodetector and 94 µW for ZnSe-based integrated photodetector. This successful integration indicates the potential of the patterned oxide growth technique in the development of integrated devices based on II–VI ZnS and ZnSe compounds for short-wavelength applications.
Relation: 48, pp.112201-112205
URI: http://ntour.ntou.edu.tw/handle/987654321/28783
Appears in Collections:[電機工程學系] 期刊論文

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