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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28781

Title: Monolithic photoreceiver constructed with a ZnSe MSM photodiode and an InGaP/GaAs HBT
Authors: Ming-Yao Chen;Chung-Cheng Chang
Contributors: NTOU:Department of Electrical Engineering
國立臺灣海洋大學:電機工程學系
Keywords: Heterojunction bipolar transistors (HBT);InGaP;ZnSe;metal–semiconductor–metal (MSM);photoreceiver
Date: 2008
Issue Date: 2011-10-21T02:40:24Z
Publisher: IEEE Electron Device Letters
Abstract: Abstract:The monolithic integration of a ZnSe metal-semiconductor-metal photodiode and an InGaP/GaAs heterojunction bipolar transistor has been achieved successfully on a GaAs substrate. As a result of a current amplification ratio of 20.8, the present monolithic photoreceiver illuminated at an optical input-power intensity of 10 muW has shown high voltage amplification sensitivity of -29.6 mV/muW. The fabrication process and characterization for the integrated device will be useful for the development of wide-bandgap-based short-wavelength optoelectronic integrated circuits in the future.
Relation: 29(11), pp.1212-1214
URI: http://ntour.ntou.edu.tw/handle/987654321/28781
Appears in Collections:[電機工程學系] 期刊論文

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