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Please use this identifier to cite or link to this item: http://ntour.ntou.edu.tw:8080/ir/handle/987654321/28650

Title: Temperature-dependent characteristics of an emitter-ledge passivated InGaP/GaAs heterojunction bipolar transistor
Authors: Tzu-Pin Chen;Ssu-I Fu;Jung-Hui Tsai;Wen-Shiung Lour;Der-Feng Guo;Shiou-Ying Cheng;Wen-Chau Liu
Contributors: 國立臺灣海洋大學:電機工程學系
Date: 2006
Issue Date: 2011-10-21T02:38:50Z
Publisher: Semiconductor Science and Technology
Abstract: Abstract:The temperature-dependent dc characteristics and noise performance of an interesting InGaP/GaAs heterojunction bipolar transistor (HBT) with emitter ledge passivation are demonstrated. Experimentally, due to the emitter ledge passivation, higher current gains and wider collector current over the measured temperature range (300–400 K) are observed as compared to a conventional device. In addition, the studied device exhibits lower base current ideality factors, better thermal stabilities on dc current gains, lower base surface recombination current densities and improved device reliability. Therefore, the studied device is suitable for low-power and high-temperature electronic applications.
Relation: 21(12), pp.1733-1737
URI: http://ntour.ntou.edu.tw/handle/987654321/28650
Appears in Collections:[電機工程學系] 期刊論文

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